Dr Saptarsi Ghosh

Lecturer

Electronic and Electrical Engineering

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Office - 324
Third Floor
Engineering North
Bay Campus

Available For Postgraduate Supervision

Research Links

https://orcid.org/0000-0003-1685-6228

Google Scholar

About

Dr Saptarsi Ghosh is a lecturer in the Electronic and Electrical Engineering department, and he joined Swansea University in early 2024. Prior to this lectureship, he was a Postdoctoral researcher at the University of Cambridge and completed his PhD from the Indian Institute of Technology (IIT) Kharagpur.

His current research is at the crossroads of electrical engineering and applied physics with two technological objectives - i) leapfrogging the energy efficiency of modern power electronics and ii) realising devices for transformative quantum 2.0 applications. To achieve these, a particular focus is on low-dimensional devices of the gallium nitride (GaN) and gallium oxide (Ga2O3) family of wide bandgap semiconductors. With state-of-art tools in epitaxial growth, material and electrical characterisation, and lithography, his group aims to optimise their large-scale growth, understand the role of non-idealities (such as defects) on macroscopic device performance, and apply physics-based principles to device engineering.

Primarily based in the Centre of Integrative Semiconductor Materials (CISM) at the Bay campus, his research strongly benefits from the experimental capabilities of this £50 M centre operating since 2023. In addition to the strong connections within the local South Wales semiconductor cluster, he has active academic collaborators distributed in the UK and India.

Dr Ghosh has been a member of the global society of the Institute of Electrical and Electronics Engineers (IEEE) since 2014 and currently serves as a peer-reviewer of several top-tier journals.

Areas Of Expertise

Wide-bandgap (nitrides & oxides) electronics
Heterostructure design for power and RF devices
Reliability of transistors
Compound semiconductor growth (MOCVD & MBE)
Structure-property relationship at nanoscale
Quantum transport and spin dynamics

Career Highlights

Teaching Interests

Solids-state electronic devices

Microelectronic circuits

Semiconductor material and device characterisation

Electromagnetism

Publications

Research Highlights

Cannon, J., Bishop, S., Eggleton, K., Yağcı, H., Clark, R., Ibrahim, S., Hadden, J., Ghosh, S., Kappers, M., Oliver, R., & Bennett, A. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters, 124(24)
https://doi.org/10.1063/5.0207744, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66863
Chen, C., Ghosh, S., Wolf, P., Liang, Z., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2024). Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters, 124(23)
https://doi.org/10.1063/5.0203646, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66864
http://dx.doi.org/10.1063/5.0203646
Sarkar, M., Adams, F., Dar, S., Penn, J., Ji, Y., Gundimeda, A., Zhu, T., Liu, C., Hirshy, H., Massabuau, F., O’Hanlon, T., Kappers, M., Ghosh, S., Kusch, G., & Oliver, R. (2024). Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons. Microscopy and Microanalysis, 30(2), 208-225.
https://doi.org/10.1093/mam/ozae028, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66865
Hinz, A., Ghosh, S., Fairclough, S., Griffiths, J., Kappers, M., Oliver, R., & Wallis, D. (2023). Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth, 624, 127420
https://doi.org/10.1016/j.jcrysgro.2023.127420, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66877
Chen, C., Ghosh, S., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, 113833
https://doi.org/10.1016/j.ultramic.2023.113833, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66866
Cheng, X., Wessling, N., Ghosh, S., Kirkpatrick, A., Kappers, M., Lekhai, Y., Morley, G., Oliver, R., Smith, J., Dawson, M., Salter, P., & Strain, M. (2023). Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers. ACS Photonics, 10(9), 3374-3383.
https://doi.org/10.1021/acsphotonics.3c00854, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66868
Loeto, K., Kusch, G., Ghosh, S., Kappers, M., & Oliver, R. (2023). Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence. Micron, 172, 103489
https://doi.org/10.1016/j.micron.2023.103489, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66867
Loeto, K., Kusch, G., Ghosh, S., Frentrup, M., Hinz, A., & Oliver, R. (2023). Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence. physica status solidi (a), 220(16)
https://doi.org/10.1002/pssa.202200830, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66870
Grishchenko, Y., Dawson, J., Ghosh, S., Gundimeda, A., Spiridon, B., Raveendran, N., Oliver, R., Kar-Narayan, S., & Calahorra, Y. (2023). Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity. Journal of Magnetism and Magnetic Materials, 580, 170877
https://doi.org/10.1016/j.jmmm.2023.170877, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66869
Ghosh, S., Hinz, A., Frentrup, M., Alam, S., Wallis, D., & Oliver, R. (2023). Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology, 38(4), 044001
https://doi.org/10.1088/1361-6641/acb9b6, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66871

All Research

Journal Articles

Ghosh, S., Sarkar, M., Frentrup, M., Kappers, M., & Oliver, R. (2024). Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates. Journal of Applied Physics, 136(4)
https://doi.org/10.1063/5.0216672, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa67275
Loeto, K., Fairclough, S., Griffiths, I., Kusch, G., Ghosh, S., Kappers, M., Young, N., & Oliver, R. (2024). Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN. Journal of Applied Physics, 136(4)
https://doi.org/10.1063/5.0211529, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa67276
Cannon, J., Bishop, S., Eggleton, K., Yağcı, H., Clark, R., Ibrahim, S., Hadden, J., Ghosh, S., Kappers, M., Oliver, R., & Bennett, A. (2024). Room temperature quantum emitters in aluminum nitride epilayers on silicon. Applied Physics Letters, 124(24)
https://doi.org/10.1063/5.0207744, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66863
Chen, C., Ghosh, S., Wolf, P., Liang, Z., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2024). Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters, 124(23)
https://doi.org/10.1063/5.0203646, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66864
http://dx.doi.org/10.1063/5.0203646
Sarkar, M., Adams, F., Dar, S., Penn, J., Ji, Y., Gundimeda, A., Zhu, T., Liu, C., Hirshy, H., Massabuau, F., O’Hanlon, T., Kappers, M., Ghosh, S., Kusch, G., & Oliver, R. (2024). Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons. Microscopy and Microanalysis, 30(2), 208-225.
https://doi.org/10.1093/mam/ozae028, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66865
Hinz, A., Ghosh, S., Fairclough, S., Griffiths, J., Kappers, M., Oliver, R., & Wallis, D. (2023). Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth, 624, 127420
https://doi.org/10.1016/j.jcrysgro.2023.127420, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66877
Chen, C., Ghosh, S., Adams, F., Kappers, M., Wallis, D., & Oliver, R. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, 113833
https://doi.org/10.1016/j.ultramic.2023.113833, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66866
Loeto, K., Kusch, G., Ghosh, S., Kappers, M., & Oliver, R. (2023). Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence. Micron, 172, 103489
https://doi.org/10.1016/j.micron.2023.103489, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66867
Cheng, X., Wessling, N., Ghosh, S., Kirkpatrick, A., Kappers, M., Lekhai, Y., Morley, G., Oliver, R., Smith, J., Dawson, M., Salter, P., & Strain, M. (2023). Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers. ACS Photonics, 10(9), 3374-3383.
https://doi.org/10.1021/acsphotonics.3c00854, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66868
Grishchenko, Y., Dawson, J., Ghosh, S., Gundimeda, A., Spiridon, B., Raveendran, N., Oliver, R., Kar-Narayan, S., & Calahorra, Y. (2023). Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity. Journal of Magnetism and Magnetic Materials, 580, 170877
https://doi.org/10.1016/j.jmmm.2023.170877, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66869
Loeto, K., Kusch, G., Ghosh, S., Frentrup, M., Hinz, A., & Oliver, R. (2023). Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence. physica status solidi (a), 220(16)
https://doi.org/10.1002/pssa.202200830, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66870
Jiang, N., Ghosh, S., Frentrup, M., Fairclough, S., Loeto, K., Kusch, G., Oliver, R., & Joyce, H. (2023). Complications in silane-assisted GaN nanowire growth. Nanoscale Advances, 5(9), 2610-2620.
https://doi.org/10.1039/d2na00939k, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66872
Ghosh, S., Hinz, A., Frentrup, M., Alam, S., Wallis, D., & Oliver, R. (2023). Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology, 38(4), 044001
https://doi.org/10.1088/1361-6641/acb9b6, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66871
Guilhabert, B., Bommer, S., Wessling, N., Jevtics, D., Smith, J., Xia, Z., Ghosh, S., Kappers, M., Watson, I., Oliver, R., Dawson, M., & Strain, M. (2022). Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices. IEEE Journal of Selected Topics in Quantum Electronics, 29(3), 1-12.
https://doi.org/10.1109/jstqe.2022.3227340, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66873
Wessling, N., Ghosh, S., Guilhabert, B., Kappers, M., Hinz, A., Toon, M., Oliver, R., Dawson, M., & Strain, M. (2022). Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips. Optical Materials Express, 12(12), 4606
https://doi.org/10.1364/ome.472999, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66874
Spiridon, B., Toon, M., Hinz, A., Ghosh, S., Fairclough, S., Guilhabert, B., Strain, M., Watson, I., Dawson, M., Wallis, D., & Oliver, R. (2021). Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis. Optical Materials Express, 11(6), 1643
https://doi.org/10.1364/ome.418728, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66875
Ghosh, S., Hinz, A., Fairclough, S., Spiridon, B., Eblabla, A., Casbon, M., Kappers, M., Elgaid, K., Alam, S., Oliver, R., & Wallis, D. (2021). Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon. ACS Applied Electronic Materials, 3(2), 813-824.
https://doi.org/10.1021/acsaelm.0c00966, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66876

Taught Modules

EG-240 Electronic Circuits

This module introduces circuit elements such as transistors and FETs and shows how they can be used as amplifiers and switches.The amplification and bias conditions for transistor amplifiers are analysed and discussed in detail. Circuit elements necessary for building operational amplifiers such as the long tailed pair and the current mirror are analysed, and a complete circuit for an operational amplifier is discussed. Some applications of operational amplifiers such as the function generator and instrumentation amplifier are introduced with practical applications. Circuits using MOSFETs for logic and analogue switches are described.
EG-252 Group Design Exercise

The module is intended to reinforce aspects of Engineering Applications (EA1) and develop EA2. Advanced features of microcontroller operation are introduced, including interrupts and programming of features of the selected microcontroller. Extended experimental work is carried out as a Group Design Exercise. Practice in using technical IT packages including microcontroller software development and the use of design aids such as PCBs and engineering drawing is inherent. Development of project documentation through a web-site. Concepts of engineering ethics introduced in first year are developed through a formal lecture, and examined as part of the presentation in the final assessment.
EGA223 Electronic Circuits Laboratory

The laboratory modules EGA223 provides a practical experience of some of the material presented in taught modules, including: EG-240 Electronic Circuits: the bipolar transistor, the long tailed pair and the instrumentation amplifier. EG-247 Signals and Systems: digital encoding and digital filters. Experiments on Amplitude Modulation, Frequency Modulation and Digital Modulation are also included to support the two Communications modules later in the degree programme.

Career History

Lecturer, Swansea University

February 2024 - Present
Research Associate, University of Cambridge

February 2018 - January 2024

Public Engagements

Dr Saptarsi Ghosh has a keen interest in developing outreach activities to enhance the enthusiasm for science among the public and promote engineering as an enriching career option for students. At present, under Dr Mohammad Monfared, he contributes to the outreach activities of the Electronic and Electrical Engineering (EEE) department. Alongside EEE, he is a Royce Discover Materials Ambassador (Saptarsi Ghosh - Discover Materials) and demonstrates in Materials Science-themed workshops at the national level.

Dr Saptarsi Ghosh

Email address

LinkedIn Account

Research Links

About

Areas Of Expertise

Career Highlights

Publications

Research Highlights

All Research

Journal Articles

Taught Modules

EG-240 Electronic Circuits

EG-252 Group Design Exercise

EGA223 Electronic Circuits Laboratory

Career History

Lecturer, Swansea University

Research Associate, University of Cambridge

Public Engagements