- Ahmeda, K., Ubochi, B., Alqaysi, M., Al-Khalidi, A., Wasige, E., & Kalna, K. (2020). The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability, 115, 113965 https://doi.org/10.1016/j.microrel.2020.113965, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55553
- Mohamed, A., Ghazali, N., Chong, H., Cobley, R., Li, L., & Kalna, K. (2020). Channel Mobility and Contact Resistance in Scaled ZnO Thin-Film Transistors. Solid-State Electronics, 172, 107867 https://doi.org/10.1016/j.sse.2020.107867, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa54909
- Forster, S., Chaussende, D., & Kalna, K. (2020). SiC/Al4SiC4-Based Heterostructure Transistors. ACS Applied Electronic Materials, 2(9), 3001-3007. https://doi.org/10.1021/acsaelm.0c00614, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55561 https://pubs.acs.org/doi/abs/10.1021/acsaelm.0c00614
- Islam, A., Aynul, A., & Kalna, K. (2020). Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations. Journal of Physics: Conference Series, 1637, 012007 https://doi.org/10.1088/1742-6596/1637/1/012007, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55818
- Duffy, S., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H., Bourzgui, N., & Soltani, A. (2020). A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 67(5), 1924-1930. https://doi.org/10.1109/ted.2020.2980329, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa54035
- Nagy, D., Espineira, G., Indalecio, G., Garcia-Loureiro, A., Kalna, K., & Seoane, N. (2020). Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes. IEEE Access, 8, 53196-53202. https://doi.org/10.1109/access.2020.2980925, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53939
- Seoane, N., Nagy, D., Indalecio, G., Espiñeira, G., Kalna, K., & García-Loureiro, A. (2019). A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs. Materials, 12(15), 2391 https://doi.org/10.3390/ma12152391, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa51467
- Islam, A., Kalna, K., & Kalna, K. (2019). Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects. IOP Conference Series: Materials Science and Engineering, 504, 012021 https://doi.org/10.1088/1757-899X/504/1/012021, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50487
- Espineira, G., Nagy, D., Indalecio, G., Garcia-Loureiro, A., Kalna, K., Seoane, N., & Kalna, K. (2019). Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET. IEEE Electron Device Letters, 40(4), 510-513. https://doi.org/10.1109/LED.2019.2900494, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50182
- Alqaysi, M., Martinez, A., Ahmeda, K., Ubochi, B., Kalna, K., & Martinez Muniz, A. (2019). Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET. IET Power Electronics, 12(11), 2731-2740. https://doi.org/10.1049/iet-pel.2018.5897, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52363
- Adenekan, O., Holland, P., & Kalna, K. (2019). Scaling and optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub–50 V applications. Microelectronics Reliability, 99, 213-221. https://doi.org/10.1016/j.microrel.2019.04.008, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50951
- Forster, S., Chaussende, D., & Kalna, K. (2019). Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4. ACS Applied Energy Materials, 2(1), 715-720. https://doi.org/10.1021/acsaem.8b01767, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50391
- Nagy, D., Indalecio, G., Garcia-Loureiro, A., Espineira, G., Elmessary, M., Kalna, K., & Seoane, N. (2019). Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs. IEEE Access, 7, 12790-12797. https://doi.org/10.1109/access.2019.2892592, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa48909
- Indalecio, G., Garcia-Loureiro, A., Elmessary, M., Kalna, K., & Seoane, N. (2018). Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations. IEEE Journal of the Electron Devices Society, 1-1. https://doi.org/10.1109/JEDS.2018.2828504, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa39889
- Mohamed, A., Oxland, R., Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., & Kalna, K. (2018). Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. Solid-State Electronics https://doi.org/10.1016/j.sse.2018.01.006, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa38406
- Seoane, N., Indalecio, G., Nagy, D., Kalna, K., & Garcia-Loureiro, A. (2018). Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability. IEEE Transactions on Electron Devices, 65(2), 456-462. https://doi.org/10.1109/TED.2017.2785325, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa38327
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Adenekan, O., Holland, P., & Kalna, K. (2018). Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. Microelectronics Journal, 81, 94-100.
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Duffy, S., Benbakhti, B., Kalna, K., Boucherta, M., Zhang, W., Bourzgui, N., & Soltani, A. (2018). Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6, 42721-42728.
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Duffy, S., Benbakhti, B., Kalna, K., Boucherta, M., Zhang, W., Bourzgui, N., & Soltani, A. (2018). Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6, 42721-42728.
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Nagy, D., Indalecio, G., Garcia-Loureiro, A., Elmessary, M., Kalna, K., & Seoane, N. (2018). FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability. IEEE Journal of the Electron Devices Society, 6, 332-340.
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Ahmeda, K., Ubochi, B., Benbakhti, B., Duffy, S., Soltani, A., Zhang, W., & Kalna, K. (2017). Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures. IEEE Access, 5(October), 20946-20952.
- B. Ubochi, K. Ahmeda, S. Faramehr, P. Igić, A. Al-Khalidi, E. Wasige, and K. Kalna, Operational Frequency Degradation Induced Trapping in Scaled GaN HEMTs, accepted to Microelectron. Reliab.(2017).
- G. Indalecio, N. Seoane, K. Kalna and A. J. García-Loureiro, Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects, accepted to IEEE Trans. Electron Devices (2017).
- M. A. Elmessary, D. Nagy, M. Aldegunde, Natalia Seoane, G. Indalecio, J. Lindberg, W. Dettmer, D. Perić, A. J. García-Loureiro, K. Kalna, Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations, Solid-State Electron. 128 (2017) 17-24.
- Olga Kryvchenkova, I. Abdullah, J. Macdonald, M. Elliott, T. Anthopoulos, Y.-H. Lin, P. Igić, K. Kalna, and R. J. Cobley, A non-destructive method for mapping metal contact diffusion in In2O3 thin-film transistors, ACS Appl. Mater. & Interfaces 8, No. 38, (2016) 25631-25636.
- B. Benbakhti, K. H. Chan, A. Soltani and K. Kalna, Device and Circuit Performance of the Future Hybrid III-V and Ge based CMOS Technology, IEEE Trans. Electron Devices 63, No. 10, Oct. (2016) 3893 - 3899.
- Natalia Seoane, M. Aldegunde, D. Nagy, M. A. Elmessary, G. Indalecio, A. J. García-Loureiro and K. Kalna, Simulation Study of Scaled In0.53Ga0.47As and Si FinFETs for Sub-16 nm Technology Nodes, Semicond. Sci. Technol. 31, No. 7, (2016) 075005 (6pp).
- G. Indalecio, A. J. García-Loureiro, N. Seoane and K. Kalna, Study of Metal-Gate Work-Function Variation using Voronoi cells: Comparison of Rayleigh and Gamma distributions, IEEE Trans. Electron Devices 63, No. 6, June (2016) 2625-2628.
- M. A. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. G. Dettmer, D. Periç, A. J. García-Loureiro, and K. Kalna, Anisotropic Quantum Corrections for 3D Finite Element Monte Carlo Simulations of Nanoscale Multigate Transistors, IEEE Trans. Electron Devices 63, No. 3, March (2016) 933-939.
- N. Seoane, G. Indalecio, M. Aldegunde, D. Nagy, M. A. Elmessary, A. J. García-Loureiro and K. Kalna, Comparison of Fin Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs, IEEE Trans. Electron Devices 63, No. 3, March (2016) 1209-1216.
- A. M. Lord, T. G. Maffeis, O. Kryvchenkova, R. J. Cobley, K. Kalna., D. M. Kepaptsoglou, Q. M. Ramasse, A. S. Walton, M. B. Ward, J. Köble and S. P. Wilks, Controlling the Electrical Transport Properties of Nanocontacts to Nanowires, Nano Lett. 15, 4248-4254 (2015).
- C. J. Barnett, O. Kryvchenkova, L. S. J. Wilson, T. G. G. Maffeis, K. Kalna, and R. J. Cobley, The role of probe oxide in local surface conductivity measurements, J. Appl. Phys. 117, No. 17, May (2015) 174306 (7pp).
- G. Indalecio, N. Seoane, M. Aldegunde, K. Kalna, and A. J. García-Loureiro, Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold, J. Low Power Electron. 11, No. 2, 1-7 (2015).
- M. Aldegunde and K. Kalna, Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes, Comput. Phys. Commun. 189, Apr. (2015) 31-36.
- D. Nagy, M. A. Elmessary, M. Aldegunde, R. Valin, A. Martinez, J. Lindberg, W. G. Dettmer, D. Periç A. J. García-Loureiro, and K. Kalna, 3D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET with Different Cross-Sections, IEEE Trans. Nanotechnol. 14, No. 1, Jan. (2015) 93-100.
- M. Aldegunde and K. Kalna, Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes, accepted to Comput. Phys. Commun. (2015).
- S. Faramehr, K. Kalna and P. Igiç, Design and simulation of a novel 1400V–4000V enhancement mode buried gate GaN HEMT for power applications, Semicond. Sci. Technol. 29, No. 11, Nov. (2014) 115020 (7pp).
- M. Aldegunde, S. Hepplestone, P. Sushko, and K. Kalna, Multi-scale simulations of a Mo/n+-GaAs Schottky contact for nano-scale III-V MOSFETs, invited for Semicond. Sci. Technol. 29 (2014).
- G. Indalecio, M. Aldegunde, N. Seoane, K. Kalna and A. J. García-Loureiro, Statistical study of the influence of LER and MGG in SOI MOSFET, Semicond. Sci. Technol. 29, No. 4, Apr. (2014) 045005 (7pp).
- O. Kryvchenkova, R. J. Cobley, and K. Kalna, Self-consistent modelling of tunnelling spectroscopy on III-V semiconductors, accepted to Appl. Surf. Sci. 295, March (2014) 173–179.
- S. Faramehr, K. Kalna and P. Igiç, Drift-diffusion and hydrodynamic modelling of current collapse in GaN HEMTs for RF power application, Semicond. Sci. Technol. 29, No. 2, Feb. (2014) 025007 (11pp).
- N. Seoane, G. Indalecio, E. Comesaña, M. Aldegunde, A. J. García-Loureiro and K. Kalna, Random dopant, line-edge roughness and gate workfunction variability in a Nano InGaAs FinFET, IEEE Trans. Electron Devices 61, No. 2, Feb. (2014) 466-472.
- J. Lindberg, M. Aldegunde, D. Nagy, W. G. Dettmer, K. Kalna, A. J. García-Loureiro, and D. Periç, Quantum corrections based on the 2-D Schrödinger equation for 3-D Finite Element Monte Carlo simulations of nanoscaled FinFETs, IEEE Trans. Electron Devices 61, No. 2, Feb. (2014) 423-429.
- M. Aldegunde, J. García-Loureiro, and K. Kalna, 3D Finite Element Monte Carlo Simulations of Multi-Gate Nanoscale Transistors, IEEE Trans. Electron Devices 60, No. 5, May (2013) 1561-1567.
- N. Seoane, G. Indalecio, E. Comesaña, A. J. García-Loureiro, M. Aldegunde and K. Kalna, 3D Simulations of random dopant and metal gate workfunction variability in an In0.53Ga0.47As GAA MOSFET, IEEE Electron Device Lett. 34, No. 2, Feb. (2013) 205-207.
- B. Benbakhti, A. Martinez, K. Kalna, G. Hellings, G. Eneman, K. De Meyer and M. Meuris, Simulation study of performance for a 20 nm gate length In0.53Ga0.47As Implant Free Quantum Well MOSFET, IEEE Trans. Nanotechnol. 11, 808-817 (2012)
- A. Islam, B. Benbakhti, and K. Kalna, Monte Carlo study of ultimate channel scaling in Si and In0.3Ga0.7As bulk MOSFETs , IEEE Trans. Nanotechnol. 10, 1424-1432 (2011)
- K. Kalna, N. Seoane, A. J. García-Loureiro, I. G. Thayne, and A. Asenov, Benchmarking of scaled InGaAs implant-free nanoMOSFETs, IEEE Trans. Electron Devices 55, 2297-2306 (2008)
- M. Aldegunde, N. Seoane, and A. J. García-Loureiro, P. V. Sushko, A. L. Shluger, J. L. Gavartin, K. Kalna and A. Asenov, Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors, Phys. Rev. E 77, 056702, 9 pages (2008)
- B. Benbakhti, A. Soltani, K. Kalna, M. Rousseau, and J.-C. De Jaeger, Effects of self-heating on performance degradation in AlGaN/GaN-based devices, IEEE Trans. Electron Devices 56, 2178-2185 (2009)
- A. Martinez, K. Kalna, P. V. Sushko, A. L. Shluger, J. R. Barker, and A. Asenov, Impact of body-thickness-dependent bandstructure on scaling of Double Gate MOSFETs: a DFT/NEGF study, IEEE Trans. Nanotechnol. 8, 159-166 (2009)