Professor Mike Jennings

Professor

Electronic and Electrical Engineering

m.r.jennings@swansea.ac.uk

Intermediate Welsh Speaker

Academic Office - B205
Second Floor
Engineering East
Bay Campus

Available For Postgraduate Supervision

Research Links

https://orcid.org/0000-0003-3270-0805

Google Scholar

Scopus

About

An academic with a focus on wide bandgap electronic materials (silicon carbide, gallium oxide and gallium nitride) for energy-efficient applications.

Having worked in the field of silicon carbide power electronics and devices since 2003, my main interest is to research the manufacturability of this technology through an extensive network of industrial partners.

Recently, I have undertaken numerous research projects within the field of ultra-wide bandgap gallium oxide for power electronic application. Here I aim to explore the feasibility of this new material from the commercialisation (product) perspective.

Areas Of Expertise

Power semiconductor device physics and design
Wide bandgap materials and devices
Electrical characterisation of power semiconductor devices
Reliability of power semiconductor devices

Publications

Research Highlights

Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M., Russell, S., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F., Sandana, V., Bove, P., Rogers, D., & Jennings, M. (2019). Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes. Materials Today Energy, 14, 100350
https://doi.org/10.1016/j.mtener.2019.100350, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52399
Arvanitopoulos, A., Antoniou, M., Perkins, S., Jennings, M., Belanche, M., Gyftakis, K., & Lophitis, N. (2019). On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 1-1.
https://doi.org/10.1109/TIA.2019.2911872, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49906
Via, F., Roccaforte, F., Magna, A., Nipoti, R., Mancarella, F., Wellman, P., Crippa, D., Mauceri, M., Ward, P., Miglio, L., , M., Schöner, A., Nejim, A., Vivani, L., Yakimova, R., Syväjärvi, M., Grosset, G., Torregrosa, F., Jennings, M...., & Jennings, M. (2018). 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum, 924, 913-918.
https://doi.org/10.4028/www.scientific.net/MSF.924.913, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49905
Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T., Phillips, M., Russell, S., Jennings, M., Berini, B., Jomard, F., & Dumont, Y. (2017). P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Materials Today Physics, 3, 118-126.
https://doi.org/10.1016/j.mtphys.2017.10.002, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49904
Russell, S., Perez-Tomas, A., McConville, C., Fisher, C., Hamilton, D., Mawby, P., Jennings, M., & Jennings, M. (2017). Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), 256-261.
https://doi.org/10.1109/JEDS.2017.2706321, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49903
Hamilton, D., Jennings, M., Perez-Tomas, A., Russell, S., Hindmarsh, S., Fisher, C., & Mawby, P. (2017). High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs. IEEE Transactions on Power Electronics, 32(10), 7967-7979.
https://doi.org/10.1109/TPEL.2016.2636743, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49902
Li, F., Mawby, P., Song, Q., Perez-Tomas, A., Shah, V., Sharma, Y., Hamilton, D., Fisher, C., Gammon, P., & Jennings, M. (2020). A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability. IEEE Transactions on Electron Devices, 67(1), 237-242.
https://doi.org/10.1109/ted.2019.2954911, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53335
Arvanitopoulos, A., Antoniou, M., Jennings, M., Perkins, S., Gyftakis, K., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 54-65.
https://doi.org/10.1109/jestpe.2019.2942714, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53620
Chikoidze, E., Sartel, C., Madaci, I., Mohamed, H., Vilar, C., Ballesteros, B., Belarre, F., Corro, E., Vales-Castro, P., Sauthier, G., Li, L., Jennings, M., Sallet, V., Dumont, Y., & Pérez-Tomás, A. (2020). p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics. Crystal Growth & Design, 20(4), 2535-2546.
https://doi.org/10.1021/acs.cgd.9b01669, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53748
http://dx.doi.org/10.1021/acs.cgd.9b01669
Bashar, E., Rogers, D., Wu, R., Ran, L., Jennings, M., Green, T., & Mawby, P. (2020). A New Protection Scheme for an SSSC in an MV Network by Using a Varistor and Thyristors. IEEE Transactions on Power Delivery, 1-1.
https://doi.org/10.1109/tpwrd.2020.2982512, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53888
https://spiral.imperial.ac.uk/handle/10044/1/77645
Renz, A., Li, F., Vavasour, O., Gammon, P., Dai, T., Baker, G., Via, F., Zielinski, M., Zhang, L., Grant, N., Murphy, J., Mawby, P., Jennings, M., & Shah, V. (2021). Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36(5), 055006
https://doi.org/10.1088/1361-6641/abefa1, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa56858
Li, F., Renz, A., Pérez-Tomás, A., Shah, V., Gammon, P., Via, F., Jennings, M., & Mawby, P. (2021). A study on free-standing 3C-SiC bipolar power diodes. Applied Physics Letters, 118(24), 242101
https://doi.org/10.1063/5.0054433, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57198
Li, F., Jokubavicius, V., Jennings, M., Yakimova, R., Tomás, A., Russell, S., Sharma, Y., Roccaforte, F., Mawby, P., & Via, F. (2019). Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates. Materials Science Forum, 963, 353-356.
https://doi.org/10.4028/www.scientific.net/msf.963.353, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57465
Li, F., Qiu, S., Jennings, M., & Mawby, P. (2020). Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates. Materials Science Forum, 1004, 659-664.
https://doi.org/10.4028/www.scientific.net/msf.1004.659, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57466
Li, F., Roccaforte, F., Greco, G., Fiorenza, P., Via, F., Pérez-Tomas, A., Evans, J., Fisher, C., Monaghan, F., Mawby, P., & Jennings, M. (2021). Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials, 14(19), 5831
https://doi.org/10.3390/ma14195831, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58482
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M., Perkins, S., Gyftakis, K., & Lophitis, N. (2022). 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations. IEEE Transactions on Industry Applications, 58(1), 565-575.
https://doi.org/10.1109/tia.2021.3119269, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58665
JONES, B., Mitchell, J., Evans, J., Monaghan, F., Jennings, M., Bolton, C., Riddel, K., Ashraf, H., & Guy, O. (2022). Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application. Materials Science Forum, 1062, 582-587.
https://doi.org/10.4028/p-xd84zm, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60613
MONAGHAN, F., Martinez Muniz, A., Fisher, C., & Jennings, M. (2023). Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET. Key Engineering Materials, 948, 69-75.
https://doi.org/10.4028/p-e6c13m, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66248

All Research

Journal Articles

MONAGHAN, F., Martinez Muniz, A., Fisher, C., & Jennings, M. (2023). Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET. Key Engineering Materials, 948, 69-75.
https://doi.org/10.4028/p-e6c13m, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66248
JONES, B., Mitchell, J., Evans, J., Monaghan, F., Jennings, M., Bolton, C., Riddel, K., Ashraf, H., & Guy, O. (2022). Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application. Materials Science Forum, 1062, 582-587.
https://doi.org/10.4028/p-xd84zm, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60613
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M., Perkins, S., Gyftakis, K., & Lophitis, N. (2022). 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations. IEEE Transactions on Industry Applications, 58(1), 565-575.
https://doi.org/10.1109/tia.2021.3119269, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58665
Li, F., Roccaforte, F., Greco, G., Fiorenza, P., Via, F., Pérez-Tomas, A., Evans, J., Fisher, C., Monaghan, F., Mawby, P., & Jennings, M. (2021). Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials, 14(19), 5831
https://doi.org/10.3390/ma14195831, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58482
Li, F., Renz, A., Pérez-Tomás, A., Shah, V., Gammon, P., Via, F., Jennings, M., & Mawby, P. (2021). A study on free-standing 3C-SiC bipolar power diodes. Applied Physics Letters, 118(24), 242101
https://doi.org/10.1063/5.0054433, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57198
Renz, A., Li, F., Vavasour, O., Gammon, P., Dai, T., Baker, G., Via, F., Zielinski, M., Zhang, L., Grant, N., Murphy, J., Mawby, P., Jennings, M., & Shah, V. (2021). Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36(5), 055006
https://doi.org/10.1088/1361-6641/abefa1, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa56858
Li, F., Qiu, S., Jennings, M., & Mawby, P. (2020). Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates. Materials Science Forum, 1004, 659-664.
https://doi.org/10.4028/www.scientific.net/msf.1004.659, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57466
Chikoidze, E., Sartel, C., Madaci, I., Mohamed, H., Vilar, C., Ballesteros, B., Belarre, F., Corro, E., Vales-Castro, P., Sauthier, G., Li, L., Jennings, M., Sallet, V., Dumont, Y., & Pérez-Tomás, A. (2020). p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics. Crystal Growth & Design, 20(4), 2535-2546.
https://doi.org/10.1021/acs.cgd.9b01669, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53748
http://dx.doi.org/10.1021/acs.cgd.9b01669
Bashar, E., Rogers, D., Wu, R., Ran, L., Jennings, M., Green, T., & Mawby, P. (2020). A New Protection Scheme for an SSSC in an MV Network by Using a Varistor and Thyristors. IEEE Transactions on Power Delivery, 1-1.
https://doi.org/10.1109/tpwrd.2020.2982512, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53888
https://spiral.imperial.ac.uk/handle/10044/1/77645
Arvanitopoulos, A., Antoniou, M., Jennings, M., Perkins, S., Gyftakis, K., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 54-65.
https://doi.org/10.1109/jestpe.2019.2942714, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53620
Li, F., Mawby, P., Song, Q., Perez-Tomas, A., Shah, V., Sharma, Y., Hamilton, D., Fisher, C., Gammon, P., & Jennings, M. (2020). A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability. IEEE Transactions on Electron Devices, 67(1), 237-242.
https://doi.org/10.1109/ted.2019.2954911, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53335
Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M., Russell, S., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F., Sandana, V., Bove, P., Rogers, D., & Jennings, M. (2019). Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes. Materials Today Energy, 14, 100350
https://doi.org/10.1016/j.mtener.2019.100350, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52399
Arvanitopoulos, A., Antoniou, M., Perkins, S., Jennings, M., Belanche, M., Gyftakis, K., & Lophitis, N. (2019). On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 1-1.
https://doi.org/10.1109/TIA.2019.2911872, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49906
Li, F., Jokubavicius, V., Jennings, M., Yakimova, R., Tomás, A., Russell, S., Sharma, Y., Roccaforte, F., Mawby, P., & Via, F. (2019). Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates. Materials Science Forum, 963, 353-356.
https://doi.org/10.4028/www.scientific.net/msf.963.353, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57465
Via, F., Roccaforte, F., Magna, A., Nipoti, R., Mancarella, F., Wellman, P., Crippa, D., Mauceri, M., Ward, P., Miglio, L., , M., Schöner, A., Nejim, A., Vivani, L., Yakimova, R., Syväjärvi, M., Grosset, G., Torregrosa, F., Jennings, M...., & Jennings, M. (2018). 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum, 924, 913-918.
https://doi.org/10.4028/www.scientific.net/MSF.924.913, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49905
Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T., Phillips, M., Russell, S., Jennings, M., Berini, B., Jomard, F., & Dumont, Y. (2017). P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Materials Today Physics, 3, 118-126.
https://doi.org/10.1016/j.mtphys.2017.10.002, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49904
Russell, S., Perez-Tomas, A., McConville, C., Fisher, C., Hamilton, D., Mawby, P., Jennings, M., & Jennings, M. (2017). Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), 256-261.
https://doi.org/10.1109/JEDS.2017.2706321, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49903
Hamilton, D., Jennings, M., Perez-Tomas, A., Russell, S., Hindmarsh, S., Fisher, C., & Mawby, P. (2017). High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs. IEEE Transactions on Power Electronics, 32(10), 7967-7979.
https://doi.org/10.1109/TPEL.2016.2636743, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49902

Supervision

Untitled (current)

PhD

Other supervisor: Dr Matt Roach
Gallium Oxide Power Electronics (current)

PhD

Other supervisor: Dr Antonio Martinez Muniz
Variable Gate Voltage Based Switching Strategy for SiC MOSFET Modules (current)

PhD

Other supervisor: Dr Grazia Todeschini

Other supervisor: Dr Zhongfu Zhou
Gallium Oxide (Ga2O3) – Power Devices«br /»«br /»«br /» (current)

PhD

Other supervisor: Prof Lijie Li
Photovoltaic Emulation System and Maximum Power Point Tracking Algorithm Under Partial Shading Conditions (awarded 2023)

PhD

Other supervisor: Dr Zhongfu Zhou
A Multi-Modal Digital Twinning Framework for Root Cause Analysis and Risk Management in Smart Manufacturing (current)

PhD

Other supervisor: Dr Rajesh Ransing
Design of Ancillary Services for Battery Energy Storage Systems to Mitigate Voltage Unbalance in Power Distribution Networks (awarded 2023)

PhD

Other supervisor: Dr Zhongfu Zhou
Development of Silicon Carbide devices for next generation surge protection circuitry and power electronics (current)

EngD

Other supervisor: Dr Antonio Martinez Muniz
Development of Silicon Carbide Plasma etch processes for next generation power electronics (current)

EngD

Other supervisor: Prof Owen Guy
How much better will a vertical GaN device perform compared to current GaN HEMTs, and traditional silicon FETs? (current)

MSc

Other supervisor: Prof Owen Guy
Gate Oxide Reliability Assessment For Enhanced Performance And Longevity In Electric Vehicles (current)

MSc

Other supervisor: Prof Karol Kalna
Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation (awarded 2024)

MSc

Other supervisor: Dr Augustine Egwebe
The study and evaluation of ohmic contacts on wide band gap semiconductors (current)

MSc

Other supervisor: Prof Karol Kalna
The “Biophone”: developing and testing a Bioacoustic Recorder for science and citizen science (current)

MSc

Other supervisor: Mr Richard Lewis

Other supervisor: Prof Owen Guy
Testing Methodologies for Power Electronic Devices with Focus on MOSFETs and IGBTs (awarded 2022)

MSc

Other supervisor: Prof Owen Guy

Taught Modules

EGLM00 Power Semiconductor Devices

Power semiconductor technology is a key enabling technology leading to more efficient power conversion. Historically, the development of electronic power devices can be traced to the early 1950s when thyristors capable of operating at high current and voltages were introduced. In the years to come, the most important development has been the introduction of power devices with high-input-impedance gate such as VDMOSFETs and IGBTs. This allowed a large reduction in system size and cost, leading to many new application for power electronics in domestic appliances and automotive and aviation electronics, for example.

Professor Mike Jennings

Email address

Welsh language proficiency

LinkedIn Account

Research Links

About

Areas Of Expertise

Publications

Research Highlights

All Research

Journal Articles

Supervision

Untitled (current)

Gallium Oxide Power Electronics (current)

Variable Gate Voltage Based Switching Strategy for SiC MOSFET Modules (current)

Gallium Oxide (Ga2O3) – Power Devices«br /»«br /»«br /» (current)

Photovoltaic Emulation System and Maximum Power Point Tracking Algorithm Under Partial Shading Conditions (awarded 2023)

A Multi-Modal Digital Twinning Framework for Root Cause Analysis and Risk Management in Smart Manufacturing (current)

Design of Ancillary Services for Battery Energy Storage Systems to Mitigate Voltage Unbalance in Power Distribution Networks (awarded 2023)

Development of Silicon Carbide devices for next generation surge protection circuitry and power electronics (current)

Development of Silicon Carbide Plasma etch processes for next generation power electronics (current)

How much better will a vertical GaN device perform compared to current GaN HEMTs, and traditional silicon FETs? (current)

Gate Oxide Reliability Assessment For Enhanced Performance And Longevity In Electric Vehicles (current)

Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation (awarded 2024)

The study and evaluation of ohmic contacts on wide band gap semiconductors (current)

The “Biophone”: developing and testing a Bioacoustic Recorder for science and citizen science (current)

Testing Methodologies for Power Electronic Devices with Focus on MOSFETs and IGBTs (awarded 2022)

Taught Modules

EGLM00 Power Semiconductor Devices