Yr Athro Mike Jennings

Athro

Electronic and Electrical Engineering

m.r.jennings@abertawe.ac.uk

Siaradwr Cymraeg Canolradd

Swyddfa Academaidd - B205
Ail lawr
Adeilad Dwyreinol Peirianneg
Campws y Bae

Ar gael ar gyfer Goruchwyliaeth Ôl-raddedig

Dolenni Ymchwil

https://orcid.org/0000-0003-3270-0805

Google Scholar

Scopus

Trosolwg

Rydw i’n academydd sydd wrth fy modd gyda deunyddiau electronig lled-ddargludyddion cyfansawdd bandgap llydan (silicon carbid, galiwm ocsid a galiwm nitrid).

Ar ôl gweithio ym maes electroneg a dyfeisiau pŵer silicon carbid ers 2003, fy mhrif ddiddordeb yw ymchwilio i’r posibilrwydd o weithgynhyrchu’r dechnoleg hon drwy rwydwaith eang o bartneriaid diwydiannol.

Yn ddiweddar, rydw i wedi ymgymryd â nifer o brosiectau ymchwil o fewn maes bandgap gor-lydan galiwm ocsid ar gyfer defnydd electroneg pŵer. Yma, rydw i’n ceisio archwilio i ddichonolrwydd y deunydd newydd hwn o bersbectif masnachol (y cynnyrch).

Meysydd Arbenigedd

Ffiseg a dyluniad dyfais lled-ddargludydd pŵer
Deunyddiau a dyfeisiau bandgap llydan
Nodweddion trydanol dyfeisiau lled-ddargludydd pŵer
Dibynadwyedd dyfeisiau lled-ddargludydd pŵer

Cyhoeddiadau

Uchafbwyntiau Ymchwil

Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M., Russell, S., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F., Sandana, V., Bove, P., Rogers, D., & Jennings, M. (2019). Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes. Materials Today Energy, 14, 100350
https://doi.org/10.1016/j.mtener.2019.100350, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52399
Arvanitopoulos, A., Antoniou, M., Perkins, S., Jennings, M., Belanche, M., Gyftakis, K., & Lophitis, N. (2019). On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 1-1.
https://doi.org/10.1109/TIA.2019.2911872, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49906
Via, F., Roccaforte, F., Magna, A., Nipoti, R., Mancarella, F., Wellman, P., Crippa, D., Mauceri, M., Ward, P., Miglio, L., , M., Schöner, A., Nejim, A., Vivani, L., Yakimova, R., Syväjärvi, M., Grosset, G., Torregrosa, F., Jennings, M...., & Jennings, M. (2018). 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum, 924, 913-918.
https://doi.org/10.4028/www.scientific.net/MSF.924.913, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49905
Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T., Phillips, M., Russell, S., Jennings, M., Berini, B., Jomard, F., & Dumont, Y. (2017). P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Materials Today Physics, 3, 118-126.
https://doi.org/10.1016/j.mtphys.2017.10.002, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49904
Russell, S., Perez-Tomas, A., McConville, C., Fisher, C., Hamilton, D., Mawby, P., Jennings, M., & Jennings, M. (2017). Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), 256-261.
https://doi.org/10.1109/JEDS.2017.2706321, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49903
Hamilton, D., Jennings, M., Perez-Tomas, A., Russell, S., Hindmarsh, S., Fisher, C., & Mawby, P. (2017). High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs. IEEE Transactions on Power Electronics, 32(10), 7967-7979.
https://doi.org/10.1109/TPEL.2016.2636743, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49902
Li, F., Mawby, P., Song, Q., Perez-Tomas, A., Shah, V., Sharma, Y., Hamilton, D., Fisher, C., Gammon, P., & Jennings, M. (2020). A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability. IEEE Transactions on Electron Devices, 67(1), 237-242.
https://doi.org/10.1109/ted.2019.2954911, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53335
Arvanitopoulos, A., Antoniou, M., Jennings, M., Perkins, S., Gyftakis, K., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 54-65.
https://doi.org/10.1109/jestpe.2019.2942714, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53620
Chikoidze, E., Sartel, C., Madaci, I., Mohamed, H., Vilar, C., Ballesteros, B., Belarre, F., Corro, E., Vales-Castro, P., Sauthier, G., Li, L., Jennings, M., Sallet, V., Dumont, Y., & Pérez-Tomás, A. (2020). p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics. Crystal Growth & Design, 20(4), 2535-2546.
https://doi.org/10.1021/acs.cgd.9b01669, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53748
http://dx.doi.org/10.1021/acs.cgd.9b01669
Bashar, E., Rogers, D., Wu, R., Ran, L., Jennings, M., Green, T., & Mawby, P. (2020). A New Protection Scheme for an SSSC in an MV Network by Using a Varistor and Thyristors. IEEE Transactions on Power Delivery, 1-1.
https://doi.org/10.1109/tpwrd.2020.2982512, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53888
https://spiral.imperial.ac.uk/handle/10044/1/77645
Renz, A., Li, F., Vavasour, O., Gammon, P., Dai, T., Baker, G., Via, F., Zielinski, M., Zhang, L., Grant, N., Murphy, J., Mawby, P., Jennings, M., & Shah, V. (2021). Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36(5), 055006
https://doi.org/10.1088/1361-6641/abefa1, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa56858
Li, F., Renz, A., Pérez-Tomás, A., Shah, V., Gammon, P., Via, F., Jennings, M., & Mawby, P. (2021). A study on free-standing 3C-SiC bipolar power diodes. Applied Physics Letters, 118(24), 242101
https://doi.org/10.1063/5.0054433, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57198
Li, F., Jokubavicius, V., Jennings, M., Yakimova, R., Tomás, A., Russell, S., Sharma, Y., Roccaforte, F., Mawby, P., & Via, F. (2019). Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates. Materials Science Forum, 963, 353-356.
https://doi.org/10.4028/www.scientific.net/msf.963.353, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57465
Li, F., Qiu, S., Jennings, M., & Mawby, P. (2020). Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates. Materials Science Forum, 1004, 659-664.
https://doi.org/10.4028/www.scientific.net/msf.1004.659, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57466
Li, F., Roccaforte, F., Greco, G., Fiorenza, P., Via, F., Pérez-Tomas, A., Evans, J., Fisher, C., Monaghan, F., Mawby, P., & Jennings, M. (2021). Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials, 14(19), 5831
https://doi.org/10.3390/ma14195831, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58482
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M., Perkins, S., Gyftakis, K., & Lophitis, N. (2022). 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations. IEEE Transactions on Industry Applications, 58(1), 565-575.
https://doi.org/10.1109/tia.2021.3119269, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58665
JONES, B., Mitchell, J., Evans, J., Monaghan, F., Jennings, M., Bolton, C., Riddel, K., Ashraf, H., & Guy, O. (2022). Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application. Materials Science Forum, 1062, 582-587.
https://doi.org/10.4028/p-xd84zm, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60613
MONAGHAN, F., Martinez Muniz, A., Fisher, C., & Jennings, M. (2023). Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET. Key Engineering Materials, 948, 69-75.
https://doi.org/10.4028/p-e6c13m, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66248

Holl Ymchwil

Erthyglau Cylchgronau

MONAGHAN, F., Martinez Muniz, A., Fisher, C., & Jennings, M. (2023). Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET. Key Engineering Materials, 948, 69-75.
https://doi.org/10.4028/p-e6c13m, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa66248
JONES, B., Mitchell, J., Evans, J., Monaghan, F., Jennings, M., Bolton, C., Riddel, K., Ashraf, H., & Guy, O. (2022). Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application. Materials Science Forum, 1062, 582-587.
https://doi.org/10.4028/p-xd84zm, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60613
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M., Perkins, S., Gyftakis, K., & Lophitis, N. (2022). 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations. IEEE Transactions on Industry Applications, 58(1), 565-575.
https://doi.org/10.1109/tia.2021.3119269, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58665
Li, F., Roccaforte, F., Greco, G., Fiorenza, P., Via, F., Pérez-Tomas, A., Evans, J., Fisher, C., Monaghan, F., Mawby, P., & Jennings, M. (2021). Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials, 14(19), 5831
https://doi.org/10.3390/ma14195831, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58482
Li, F., Renz, A., Pérez-Tomás, A., Shah, V., Gammon, P., Via, F., Jennings, M., & Mawby, P. (2021). A study on free-standing 3C-SiC bipolar power diodes. Applied Physics Letters, 118(24), 242101
https://doi.org/10.1063/5.0054433, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57198
Renz, A., Li, F., Vavasour, O., Gammon, P., Dai, T., Baker, G., Via, F., Zielinski, M., Zhang, L., Grant, N., Murphy, J., Mawby, P., Jennings, M., & Shah, V. (2021). Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36(5), 055006
https://doi.org/10.1088/1361-6641/abefa1, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa56858
Li, F., Qiu, S., Jennings, M., & Mawby, P. (2020). Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates. Materials Science Forum, 1004, 659-664.
https://doi.org/10.4028/www.scientific.net/msf.1004.659, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57466
Chikoidze, E., Sartel, C., Madaci, I., Mohamed, H., Vilar, C., Ballesteros, B., Belarre, F., Corro, E., Vales-Castro, P., Sauthier, G., Li, L., Jennings, M., Sallet, V., Dumont, Y., & Pérez-Tomás, A. (2020). p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics. Crystal Growth & Design, 20(4), 2535-2546.
https://doi.org/10.1021/acs.cgd.9b01669, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53748
http://dx.doi.org/10.1021/acs.cgd.9b01669
Bashar, E., Rogers, D., Wu, R., Ran, L., Jennings, M., Green, T., & Mawby, P. (2020). A New Protection Scheme for an SSSC in an MV Network by Using a Varistor and Thyristors. IEEE Transactions on Power Delivery, 1-1.
https://doi.org/10.1109/tpwrd.2020.2982512, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53888
https://spiral.imperial.ac.uk/handle/10044/1/77645
Arvanitopoulos, A., Antoniou, M., Jennings, M., Perkins, S., Gyftakis, K., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 54-65.
https://doi.org/10.1109/jestpe.2019.2942714, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53620
Li, F., Mawby, P., Song, Q., Perez-Tomas, A., Shah, V., Sharma, Y., Hamilton, D., Fisher, C., Gammon, P., & Jennings, M. (2020). A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability. IEEE Transactions on Electron Devices, 67(1), 237-242.
https://doi.org/10.1109/ted.2019.2954911, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53335
Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M., Russell, S., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F., Sandana, V., Bove, P., Rogers, D., & Jennings, M. (2019). Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes. Materials Today Energy, 14, 100350
https://doi.org/10.1016/j.mtener.2019.100350, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52399
Arvanitopoulos, A., Antoniou, M., Perkins, S., Jennings, M., Belanche, M., Gyftakis, K., & Lophitis, N. (2019). On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 1-1.
https://doi.org/10.1109/TIA.2019.2911872, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49906
Li, F., Jokubavicius, V., Jennings, M., Yakimova, R., Tomás, A., Russell, S., Sharma, Y., Roccaforte, F., Mawby, P., & Via, F. (2019). Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates. Materials Science Forum, 963, 353-356.
https://doi.org/10.4028/www.scientific.net/msf.963.353, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa57465
Via, F., Roccaforte, F., Magna, A., Nipoti, R., Mancarella, F., Wellman, P., Crippa, D., Mauceri, M., Ward, P., Miglio, L., , M., Schöner, A., Nejim, A., Vivani, L., Yakimova, R., Syväjärvi, M., Grosset, G., Torregrosa, F., Jennings, M...., & Jennings, M. (2018). 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum, 924, 913-918.
https://doi.org/10.4028/www.scientific.net/MSF.924.913, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49905
Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T., Phillips, M., Russell, S., Jennings, M., Berini, B., Jomard, F., & Dumont, Y. (2017). P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Materials Today Physics, 3, 118-126.
https://doi.org/10.1016/j.mtphys.2017.10.002, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49904
Russell, S., Perez-Tomas, A., McConville, C., Fisher, C., Hamilton, D., Mawby, P., Jennings, M., & Jennings, M. (2017). Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), 256-261.
https://doi.org/10.1109/JEDS.2017.2706321, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49903
Hamilton, D., Jennings, M., Perez-Tomas, A., Russell, S., Hindmarsh, S., Fisher, C., & Mawby, P. (2017). High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs. IEEE Transactions on Power Electronics, 32(10), 7967-7979.
https://doi.org/10.1109/TPEL.2016.2636743, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49902

Goruchwyliaeth

Untitled (cyfredol)

PhD

Goruchwyliwr arall: Dr Matt Roach
Gallium Oxide Power Electronics (cyfredol)

PhD

Goruchwyliwr arall: Dr Antonio Martinez Muniz
Variable Gate Voltage Based Switching Strategy for SiC MOSFET Modules (cyfredol)

PhD

Goruchwyliwr arall: Dr Grazia Todeschini

Goruchwyliwr arall: Dr Zhongfu Zhou
Gallium Oxide (Ga2O3) – Power Devices«br /»«br /»«br /» (cyfredol)

PhD

Goruchwyliwr arall: Prof Lijie Li
Photovoltaic Emulation System and Maximum Power Point Tracking Algorithm Under Partial Shading Conditions (dyfarnwyd 2023)

PhD

Goruchwyliwr arall: Dr Zhongfu Zhou
A Multi-Modal Digital Twinning Framework for Root Cause Analysis and Risk Management in Smart Manufacturing (cyfredol)

PhD

Goruchwyliwr arall: Dr Rajesh Ransing
Design of Ancillary Services for Battery Energy Storage Systems to Mitigate Voltage Unbalance in Power Distribution Networks (dyfarnwyd 2023)

PhD

Goruchwyliwr arall: Dr Zhongfu Zhou
Development of Silicon Carbide devices for next generation surge protection circuitry and power electronics (cyfredol)

EngD

Goruchwyliwr arall: Dr Antonio Martinez Muniz
Development of Silicon Carbide Plasma etch processes for next generation power electronics (cyfredol)

EngD

Goruchwyliwr arall: Prof Owen Guy
How much better will a vertical GaN device perform compared to current GaN HEMTs, and traditional silicon FETs? (cyfredol)

MSc

Goruchwyliwr arall: Prof Owen Guy
Gate Oxide Reliability Assessment For Enhanced Performance And Longevity In Electric Vehicles (cyfredol)

MSc

Goruchwyliwr arall: Prof Karol Kalna
Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation (dyfarnwyd 2024)

MSc

Goruchwyliwr arall: Dr Augustine Egwebe
The study and evaluation of ohmic contacts on wide band gap semiconductors (cyfredol)

MSc

Goruchwyliwr arall: Prof Karol Kalna
The “Biophone”: developing and testing a Bioacoustic Recorder for science and citizen science (cyfredol)

MSc

Goruchwyliwr arall: Mr Richard Lewis

Goruchwyliwr arall: Prof Owen Guy
Testing Methodologies for Power Electronic Devices with Focus on MOSFETs and IGBTs (dyfarnwyd 2022)

MSc

Goruchwyliwr arall: Prof Owen Guy

Modiwlau a Addysgir

EGLM00 Power Semiconductor Devices

Power semiconductor technology is a key enabling technology leading to more efficient power conversion. Historically, the development of electronic power devices can be traced to the early 1950s when thyristors capable of operating at high current and voltages were introduced. In the years to come, the most important development has been the introduction of power devices with high-input-impedance gate such as VDMOSFETs and IGBTs. This allowed a large reduction in system size and cost, leading to many new application for power electronics in domestic appliances and automotive and aviation electronics, for example.

Yr Athro Mike Jennings

Cyfeiriad ebost

Welsh language proficiency

LinkedIn Account

Dolenni Ymchwil

Trosolwg

Meysydd Arbenigedd

Cyhoeddiadau

Uchafbwyntiau Ymchwil

Holl Ymchwil

Erthyglau Cylchgronau

Goruchwyliaeth

Untitled (cyfredol)

Gallium Oxide Power Electronics (cyfredol)

Variable Gate Voltage Based Switching Strategy for SiC MOSFET Modules (cyfredol)

Gallium Oxide (Ga2O3) – Power Devices«br /»«br /»«br /» (cyfredol)

Photovoltaic Emulation System and Maximum Power Point Tracking Algorithm Under Partial Shading Conditions (dyfarnwyd 2023)

A Multi-Modal Digital Twinning Framework for Root Cause Analysis and Risk Management in Smart Manufacturing (cyfredol)

Design of Ancillary Services for Battery Energy Storage Systems to Mitigate Voltage Unbalance in Power Distribution Networks (dyfarnwyd 2023)

Development of Silicon Carbide devices for next generation surge protection circuitry and power electronics (cyfredol)

Development of Silicon Carbide Plasma etch processes for next generation power electronics (cyfredol)

How much better will a vertical GaN device perform compared to current GaN HEMTs, and traditional silicon FETs? (cyfredol)

Gate Oxide Reliability Assessment For Enhanced Performance And Longevity In Electric Vehicles (cyfredol)

Power MOSFET Human Body Model Electrostatic Discharge Analysis and Risk Mitigation (dyfarnwyd 2024)

The study and evaluation of ohmic contacts on wide band gap semiconductors (cyfredol)

The “Biophone”: developing and testing a Bioacoustic Recorder for science and citizen science (cyfredol)

Testing Methodologies for Power Electronic Devices with Focus on MOSFETs and IGBTs (dyfarnwyd 2022)

Modiwlau a Addysgir

EGLM00 Power Semiconductor Devices