Mae fy ymchwil cyfredol yn canolbwyntio ar wneuthuriad a nodweddion nanostrwythurau sinc ocsid a’u priodweddau arwynebol gan ddefnyddio amrywiaeth o dechnegau yn cynnwys allyriadau maes SEM, sbectrosgopeg ffoto-electron pelydr X, microsgopeg sganio chwiliedydd a ffoto-ymoleuedd. Fy mhrif ddiddordeb yw effaith cemeg arwyneb ar briodweddau trydanol ac optegol nanostrwythurau sinc ocsid a sut y gallant gael eu rheoli i wella dyfeisiadau sy’n synhwyro nwy.
Transmission lines, telegraph equations, characteristic impedance, reflection coefficients, VSWR, wave impedance, stubs, and basic matching circuits (quarter wave transformer and series/shunt stub matching) Application of Maxwell's equations to electro-magnetic plane wave propagation. Wave parameters, attenuation, Wave impedance, reflection, and transmission in loss-free and lossy medium. Skin depth.
State-of-the-art wide band gap semiconductor materials and technology will be considered with emphasis on diamond, silicon carbide, gallium nitride and metal oxides. The course will cover everything from materials growth through device processing technology, to devices and applications. Current commercial devices and anticipated devices will be highlighted and discussed. The semiconductor physics needed for devices simulation and an introduction to device simulation will be covered. Metal oxide wide band gap semiconductors and their applications in renewable energy generation will be discussed.
This module explores the novel properties of semiconductors and metals when their dimension reach the nanometre scale. The module reviews various types of nanostructures (nanowires, quantum dots, graphene, carbon nanotubes) focussing on fabrication techniques, properties and practical applications. It also details the challenges faced by the Silicon industry beyond Moore's law and highlights possible replacements for CMOS technology.
